View IRF644N_191268.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 94107
Advanced Process Technology l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l Fifth Generation HEXFET (R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
IRF644N IRF644NS IRF644NL
HEXFET(R) Power MOSFET
D
VDSS = 250V RDS(on) = 240m
G S
ID = 14A
TO-220AB IRF644N
D2Pak IRF644NS
TO-262 IRF644NL
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
14 9.9 56 150 1.0 20 180 8.4 15 7.9 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
www.irf.com
1
3/15/01
IRF644N/644NS/644NL
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 250 --- --- 2.0 8.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.33 --- --- --- --- --- --- --- --- --- --- 10 21 30 17 4.5 7.5 1060 140 38
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 240 m VGS = 10V, ID = 8.4A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 8.4A 25 VDS = 250V, VGS = 0V A 250 VDS = 200V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 54 ID = 8.4A 9.2 nC VDS = 200V 26 VGS = 10V, See Fig. 6 and 13 --- VDD = 125V --- ID = 8.4A ns --- RG = 6.2 --- VGS = 10V, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse 56 --- --- S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 14A, VGS = 0V --- 165 250 ns TJ = 25C, IF = 14A --- 1.0 1.6 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)**
Typ.
--- 0.50 --- ---
Max.
1.0 --- 62 40
Units
C/W
2
www.irf.com
IRF644N/644NS/644NL
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
4.5V
1
4.5V
1
20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100 0.1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.5
I D , Drain-to-Source Current (A)
TJ = 175 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 14A
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0
TJ = 25 C
10
1 4 6 8 10
V DS = 50V 20s PULSE WIDTH 11 13 15
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF644N/644NS/644NL
10000 20 VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 8.4A
VGS , Gate-to-Source Voltage (V)
16
V DS = 200V V DS = 125V V DS = 50V
C, Capacitance(pF)
1000
Ciss
12
Coss
100
8
Crss
4
10 1 10 100
0 0 12 24 36 48 60
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
TJ = 175 C
10
ID , Drain-to-Source Current (A)
100
10
100sec 1msec
1
TJ = 25 C
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 10msec
0.1 0.0
V GS = 0 V
0.4 0.8 1.1 1.5
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF644N/644NS/644NL
15
VDS
12
RD
VGS RG
ID , Drain Current (A)
D.U.T.
+
-VDD
9
VGS
Pulse Width 1 s Duty Factor 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1
PDM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF644N/644NS/644NL
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
300
VD S
L
D R IV E R
240
ID 3.4A 5.9A BOTTOM 8.4A TOP
RG
20V
D .U .T
IA S tp 0 .01
+ - VD D
180
A
120
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
60
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF644N/644NS/644NL
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs
www.irf.com
7
IRF644N/644NS/644NL
Package Outline
TO-220AB Dimensions are shown in millimeters (inches)
10 .54 (.4 15) 10 .29 (.4 05) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8)
2.87 (.11 3) 2.62 (.10 3)
3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0)
4 1 5.24 (.60 0) 1 4.84 (.58 4)
1.15 (.04 5) M IN 1 2 3
L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN
1 4.09 (.55 5) 1 3.47 (.53 0)
4.06 (.16 0) 3.55 (.14 0)
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0.93 (.03 7) 0.69 (.02 7) M BAM
3X
0.55 (.02 2) 0.46 (.01 8)
0 .3 6 (.01 4)
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H
2 .92 (.11 5) 2 .64 (.10 4)
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M
A
IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE
PART NU MBER IR F 10 1 0 9246 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
8
www.irf.com
IRF644N/644NS/644NL
D2Pak Package Outline
1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 -B 1.3 2 (.05 2) 1.2 2 (.04 8) 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 8.8 9 (.3 50 ) R E F. 1 0.16 (.4 00 ) RE F.
4.69 (.1 85) 4.20 (.1 65)
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM
0.5 5 (.022 ) 0.4 6 (.018 )
M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E
8.89 (.3 50 ) 17 .78 (.70 0)
3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X
D2Pak Part Marking Information
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
www.irf.com
9
IRF644N/644NS/644NL
TO-262 Package Outline
TO-262 Part Marking Information
10
www.irf.com
IRF644N/644NS/644NL
D2Pak Tape & Reel Information
TRR
1.60 (.0 63) 1.50 (.0 59) 4.10 (.16 1) 3.90 (.15 3)
1 .6 0 (.06 3 ) 1 .5 0 (.05 9 ) 0.36 8 (.01 4 5 ) 0.34 2 (.01 3 5 )
F E E D D IR E C TION 1 .85 (.073)
1 .65 (.065)
1 1 .6 0 (.4 57 ) 1 1 .4 0 (.4 49 )
1 5.42 ( .6 09 ) 1 5.22 ( .6 01 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TRL
10 .9 0 (.4 2 9 ) 10 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4) 1 5 .9 0 (.6 2 6) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
F E ED D IR E C TIO N
13 .50 ( .53 2) 12 .80 ( .50 4)
27 .40 (1 .079 ) 23 .90 (.9 41) 4
330.00 (14.173) MAX.
60 .00 (2.362) M IN .
NO T ES : 1. C O M FO R M S TO E IA -4 18. 2. C O N TR O LL IN G D IM E N S IO N : M ILL IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U TE R E D G E .
30 .40 (1 .19 7) M AX . 26.40 (1.039) 24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 5.0H RG = 25, IAS = 8.4A. (See Figure 12) ISD 8.4A, di/dt 378A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = 175C . This is only applied to TO-220AB package.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint & soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice. This product has been designed and qualified for the (IRF644N) automotive [Q101] & (IRF644NS/L) industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01
www.irf.com
11

▲Up To Search▲

Price & Availability of IRF644N

	To Download IRF644N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .